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High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

Y. Okamoto, K. Saigusa, T. Wada, Y. Yamakawa, A. Yamakage, T. Sasagawa, N. Katayama, H. Takatsu, H. Kageyama, and K. Takenaka, Phys. Rev. B 102, 102, 115101 (2020).

We report the electronic properties of single crystals of the candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in the proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7−1.8K.